AO8804 Datasheet and Replacement
Type Designator: AO8804
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 232 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TSSOP-8
AO8804 substitution
AO8804 Datasheet (PDF)
ao8804.pdf

AO8804Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8804 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 8A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON)
ao8801a.pdf

AO8801A20V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AO8801A uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -4.5Awith gate voltages as low as 1.8V. This device is suitable RDS(ON) (at VGS= -4.5V)
ao8803.pdf

AO8803Dual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8803/L uses advanced trench technology to VDS (V) = -12Vprovide excellent RDS(ON), low gate charge and ID = -7 A (VGS = -4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)
ao8806.pdf

AO8806Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8806 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 7 A (VGS = 4.5V)operation with gate voltages as low as 1.8V. This RDS(ON)
Datasheet: AO7414 , AO7415 , AO7417 , AO7600 , AO7800 , AO7801 , AO8801 , AO8801A , IRFZ46N , AO8807 , AO8808A , AO8810 , AO8814 , AO8818 , AO8820 , AO8822 , AO8830 .
Keywords - AO8804 MOSFET datasheet
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History: AP4835GM | AP4957GM



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