All MOSFET. FSS913AOD Datasheet

 

FSS913AOD Datasheet and Replacement


   Type Designator: FSS913AOD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO257AA
 

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FSS913AOD Datasheet (PDF)

 6.1. Size:65K  intersil
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FSS913AOD

FSS913A0D, FSS913A0RData Sheet June 1999 File Number 4451.310A, -100V, 0.280 Ohm, Radiation FeaturesHardened, SEGR Resistant, P-Channel 10A, -100V, rDS(ON) = 0.280Power MOSFETs Total DoseThe Discrete Products Operation of Intersil has developed a- Meets Pre-RAD Specifications to 100K RAD (Si)series of Radiation Hardened MOSFETs specificallydesigned for commercial an

 8.1. Size:44K  intersil
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FSS913AOD

FSS9130D,FSS9130R6A, -100V, 0.660 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 6A, -100V, rDS(ON) = 0.660 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA

Datasheet: FSS23A4D , FSS23A4R , FSS23AOD , FSS23AOR , FSS430D , FSS430R , FSS9130D , FSS9130R , 18N50 , FSS913AOR , FSS9230D , FSS9230R , FSS923AOD , FSS923AOR , FSYA250D , FSYA250R , GFB50N03 .

History: BUZ80A | 2SK3150L | NVLUS4C12N | CPH3455 | STD95N2LH5 | NTLJF4156N | FXN08S65D

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