FSS913AOD
MOSFET. Datasheet pdf. Equivalent
Type Designator: FSS913AOD
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 56
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 10
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28
Ohm
Package:
TO257AA
FSS913AOD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FSS913AOD
Datasheet (PDF)
6.1. Size:65K intersil
fss913ao.pdf 
FSS913A0D, FSS913A0RData Sheet June 1999 File Number 4451.310A, -100V, 0.280 Ohm, Radiation FeaturesHardened, SEGR Resistant, P-Channel 10A, -100V, rDS(ON) = 0.280Power MOSFETs Total DoseThe Discrete Products Operation of Intersil has developed a- Meets Pre-RAD Specifications to 100K RAD (Si)series of Radiation Hardened MOSFETs specificallydesigned for commercial an
8.1. Size:44K intersil
fss9130.pdf
FSS9130D,FSS9130R6A, -100V, 0.660 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 6A, -100V, rDS(ON) = 0.660 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RA
Datasheet: FSS23A4D
, FSS23A4R
, FSS23AOD
, FSS23AOR
, FSS430D
, FSS430R
, FSS9130D
, FSS9130R
, 4435
, FSS913AOR
, FSS9230D
, FSS9230R
, FSS923AOD
, FSS923AOR
, FSYA250D
, FSYA250R
, GFB50N03
.
