FSS913AOD Datasheet. Specs and Replacement
Type Designator: FSS913AOD 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO257AA
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FSS913AOD substitution
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FSS913AOD datasheet
fss913ao.pdf
FSS913A0D, FSS913A0R Data Sheet June 1999 File Number 4451.3 10A, -100V, 0.280 Ohm, Radiation Features Hardened, SEGR Resistant, P-Channel 10A, -100V, rDS(ON) = 0.280 Power MOSFETs Total Dose The Discrete Products Operation of Intersil has developed a - Meets Pre-RAD Specifications to 100K RAD (Si) series of Radiation Hardened MOSFETs specifically designed for commercial an... See More ⇒
fss9130.pdf
FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description 6A, -100V, rDS(ON) = 0.660 The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA... See More ⇒
Detailed specifications: FSS23A4D, FSS23A4R, FSS23AOD, FSS23AOR, FSS430D, FSS430R, FSS9130D, FSS9130R, BS170, FSS913AOR, FSS9230D, FSS9230R, FSS923AOD, FSS923AOR, FSYA250D, FSYA250R, GFB50N03
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