FSS913AOD MOSFET. Datasheet pdf. Equivalent
Type Designator: FSS913AOD
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 56 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 10 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.28 Ohm
Package: TO257AA
FSS913AOD Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FSS913AOD Datasheet (PDF)
2.1. fss913ao.pdf 
Size:65K _intersil
FSS913A0D, FSS913A0R Data Sheet June 1999 File Number 4451.3 10A, -100V, 0.280 Ohm, Radiation Features Hardened, SEGR Resistant, P-Channel • 10A, -100V, rDS(ON) = 0.280Ω Power MOSFETs • Total Dose The Discrete Products Operation of Intersil has developed a - Meets Pre-RAD Specifications to 100K RAD (Si) series of Radiation Hardened MOSFETs specifically designed for commercial an
4.1. fss9130.pdf Size:44K _intersil
FSS9130D, FSS9130R 6A, -100V, 0.660 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description • 6A, -100V, rDS(ON) = 0.660Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RA
Datasheet: FSS23A4D , FSS23A4R , FSS23AOD , FSS23AOR , FSS430D , FSS430R , FSS9130D , FSS9130R , IRFB4227 , FSS913AOR , FSS9230D , FSS9230R , FSS923AOD , FSS923AOR , FSYA250D , FSYA250R , GFB50N03 .
