All MOSFET. AO8818 Datasheet

 

AO8818 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AO8818
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.6 nC
   trⓘ - Rise Time: 13.7 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TSSOP-8

 AO8818 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AO8818 Datasheet (PDF)

 ..1. Size:113K  aosemi
 ao8818.pdf

AO8818 AO8818

AO8818Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8818 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and ID = 7A (VGS = 10V)operation with gate voltages as low as 2.5V while RDS(ON)

 9.1. Size:134K  aosemi
 ao8816.pdf

AO8818 AO8818

AO8816Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO8816 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and ID = 8 A (VGS = 10V)operation with gate voltages as low as 2.5V. This RDS(ON)

 9.2. Size:216K  aosemi
 ao8810.pdf

AO8818 AO8818

AO881020V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO8810 uses advanced trench technology to provideexcellent RDS(ON), low gate charge. It is ESD protected. ID (at VGS=4.5V) 7AThis device is suitable for use as a uni-directional or bi- RDS(ON) (at VGS= 4.5V)

 9.3. Size:411K  aosemi
 ao8814.pdf

AO8818 AO8818

AO8814Common-Drain Dual N-Channel Enhancement Mode FieldEffect TransistorGeneral Description FeaturesThe AO8814 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge andID = 7.5 A (VGS = 10V)operation with gate voltages as low as 1.8V whileRDS(ON)

 9.4. Size:1301K  kexin
 ao8810.pdf

AO8818 AO8818

SMD Type MOSFETDual N-Channel MOSFETAO8810SOP-8 Features VDS (V) = 20V ID = 7 A (VGS = 4.5V) RDS(ON) 20m (VGS = 4.5V) 1.50 0.15 RDS(ON) 24m (VGS = 2.5V) RDS(ON) 32m (VGS = 1.8V) ESD Rating: 2000V HBMD1 D2S1 1 8 D12 7G1 D13 6S2 D24 5G2 D2G1 G2S2S1 Absolute Maximum Ratings Ta = 25Parameter Symbol Rati

 9.5. Size:841K  cn vbsemi
 ao8810.pdf

AO8818 AO8818

AO8810www.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.013 at VGS = 4.5 V Available7.620RoHS*0.020 at VGS = 2.5 V 6.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RATINGS TA = 25

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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