AO8818 MOSFET Datasheet: N-Ch, 30V, 7A. Full specification with pinout and replacement list

AO8818 Specs and Replacement

Type Designator: AO8818

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.7 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TSSOP-8

AO8818 substitution

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AO8818 datasheet

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AO8816 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8816 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and ID = 8 A (VGS = 10V) operation with gate voltages as low as 2.5V. This RDS(ON) ... See More ⇒

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AO8810 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V The AO8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. ID (at VGS=4.5V) 7A This device is suitable for use as a uni-directional or bi- RDS(ON) (at VGS= 4.5V) ... See More ⇒

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AO8814 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO8814 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 7.5 A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON) ... See More ⇒