AOB11S65 MOSFET Datasheet: N-Ch, 650V, 11A. Full specification with pinout and replacement list

AOB11S65 Specs and Replacement

Type Designator: AOB11S65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 198 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 42 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.399 Ohm

Package: TO-263

AOB11S65 substitution

- MOSFET ⓘ Cross-Reference Search

AOB11S65 datasheet

..1. Size:299K aosemi
aot11s65 aob11s65 aotf11s65.pdf pdf_icon

AOT11S65/AOB11S65/AOTF11S65 TM 650V 11A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced MOSTM high voltage IDM 45A process that is designed to deliver high levels of RDS(ON),max 0.399 performance and robustness in switching applications. Qg,typ 13.2nC By provi... See More ⇒

..2. Size:299K aosemi
aob11s65.pdf pdf_icon

..3. Size:253K inchange semiconductor
aob11s65.pdf pdf_icon

isc N-Channel MOSFET Transistor AOB11S65 FEATURES Drain Current I =11A@ T =25 D C Drain Source Voltage- V =650V(Min) DSS Static Drain-Source On-Resistance R = 0.399 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

0.1. Size:300K aosemi
aob11s65l.pdf pdf_icon