AOB240L
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOB240L
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 176
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 105
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 1070
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0026
Ohm
Package:
TO-263
AOB240L
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOB240L
Datasheet (PDF)
..1. Size:418K aosemi
aob240l.pdf 
AOT240L/AOB240L/AOTF240L40V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT240L & AOB240L & AOTF240L uses Trench 40VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 105A/85Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
..2. Size:418K aosemi
aot240l aob240l aotf240l.pdf
AOT240L/AOB240L/AOTF240L40V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT240L & AOB240L & AOTF240L uses Trench 40VMOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 105A/85Athe most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
..3. Size:253K inchange semiconductor
aob240l.pdf
isc N-Channel MOSFET Transistor AOB240LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 2.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
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