All MOSFET. FSS9230R Datasheet

 

FSS9230R MOSFET. Datasheet pdf. Equivalent

Type Designator: FSS9230R

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm

Package: TO257AA

FSS9230R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FSS9230R Datasheet (PDF)

7.1. fss9230.pdf Size:44K _intersil

FSS9230R
FSS9230R

FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, June 1998 SEGR Resistant, P-Channel Power MOSFETs Features Description • 4A, -200V, rDS(ON) = 1.60Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specif- • Total Dose ically designed for commercial and military space applica- - Meets Pre-RAD Specifications to 100K RAD

8.1. fss923ao.pdf Size:45K _harris_semi

FSS9230R
FSS9230R

FSS923AOD, S E M I C O N D U C T O R FSS923AOR Radiation Hardened, SEGR Resistant February 1998 P-Channel Power MOSFETs Features Description • 7A, -200V, rDS(ON) = 0.650Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs • Total Dose specifically designed for commercial and military space applications. Enhanced Power MOS

 

Datasheet: FSS23AOR , FSS430D , FSS430R , FSS9130D , FSS9130R , FSS913AOD , FSS913AOR , FSS9230D , IRF640N , FSS923AOD , FSS923AOR , FSYA250D , FSYA250R , GFB50N03 , GFB70N03 , GFD30N03 , GFP50N03 .

 

 
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