All MOSFET. FSS9230R Datasheet

 

FSS9230R Datasheet and Replacement


   Type Designator: FSS9230R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO257AA
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FSS9230R Datasheet (PDF)

 7.1. Size:44K  intersil
 fss9230.pdf pdf_icon

FSS9230R

FSS9230D,FSS9230R4A, -200V, 1.60 Ohm, Rad Hard,June 1998 SEGR Resistant, P-Channel Power MOSFETsFeatures Description 4A, -200V, rDS(ON) = 1.60 The Discrete Products Operation of Intersil Corporation hasdeveloped a series of Radiation Hardened MOSFETs specif- Total Doseically designed for commercial and military space applica-- Meets Pre-RAD Specifications to 100K RAD

 8.1. Size:45K  harris semi
 fss923ao.pdf pdf_icon

FSS9230R

FSS923AOD,S E M I C O N D U C T O RFSS923AORRadiation Hardened, SEGR ResistantFebruary 1998 P-Channel Power MOSFETsFeatures Description 7A, -200V, rDS(ON) = 0.650 The Discrete Products Operation of Harris Semiconductorhas developed a series of Radiation Hardened MOSFETs Total Dosespecifically designed for commercial and military spaceapplications. Enhanced Power MOS

Datasheet: FSS23AOR , FSS430D , FSS430R , FSS9130D , FSS9130R , FSS913AOD , FSS913AOR , FSS9230D , NCEP15T14 , FSS923AOD , FSS923AOR , FSYA250D , FSYA250R , GFB50N03 , GFB70N03 , GFD30N03 , GFP50N03 .

History: PP4B10AD | WML11N80M3 | PSMN8R5-100ES | FHD4N65D | SFI9614 | VBZA4936 | STP85N3LH5

Keywords - FSS9230R MOSFET datasheet

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