All MOSFET. AOB262L Datasheet

 

AOB262L MOSFET. Datasheet pdf. Equivalent

Type Designator: AOB262L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 333 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.2 V

Maximum Drain Current |Id|: 140 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 95 nC

Rise Time (tr): 22 nS

Drain-Source Capacitance (Cd): 1040 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0028 Ohm

Package: TO-263

AOB262L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOB262L Datasheet (PDF)

1.1. aob262l.pdf Size:333K _aosemi

AOB262L
AOB262L

AOT262L/AOB262L 60V N-Channel MOSFET General Description Product Summary VDS 60V • Trench Power MV MOSFET technology • Low RDS(ON) ID (at VGS=10V) 140A • Low Gate Charge RDS(ON) (at VGS=10V) < 3.0mΩ (< 2.8mΩ∗) • Optimized for fast-switching applications RDS(ON) (at VGS = 6V) < 3.2mΩ (< 3.0mΩ∗) Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectif

5.1. aob2618l.pdf Size:367K _aosemi

AOB262L
AOB262L

AOT2618L/AOB2618L/AOTF2618L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2618L & AOB2618L & AOTF2618L uses trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 23A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 19mΩ Both conduction and switching power losses are RDS(ON) (at VGS=4.5V) < 25mΩ m

5.2. aob260l.pdf Size:276K _aosemi

AOB262L
AOB262L

AOT260L/AOB260L 60V N-Channel MOSFET General Description Product Summary The AOT(B)260L uses Trench MOSFET technology that VDS 60V is uniquely optimized to provide the most efficient high ID (at VGS=10V) 140A frequency switching performance. Power losses are RDS(ON) (at VGS=10V) < 2.5mW minimized due to an extremely low combination of RDS(ON) (at VGS =6V) < 2.9mW RDS(ON) and Crss.

 5.3. aob266l.pdf Size:405K _aosemi

AOB262L
AOB262L

AOT266L/AOB266L/AOTF266L 60V N-Channel MOSFET General Description Product Summary VDS The AOT266L & AOB266L & AOTF266L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 140A/78A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 3.5mΩ (< 3.2mΩ∗) Both conduction and switching power losses are RDS(ON) (at VGS=6V

5.4. aob2606l.pdf Size:349K _aosemi

AOB262L
AOB262L

AOT2606L/AOB2606L/AOTF2606L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2606L & AOB2606L & AOTF2606L uses Trench 60V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 72A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V) < 6.5mΩ (< 6.2mΩ∗) Both conduction and switching power losses are minimized due to a

 5.5. aob264l.pdf Size:358K _aosemi

AOB262L
AOB262L

AOT264L/AOB264L 60V N-Channel MOSFET General Description Product Summary VDS 60V The AOT264L/AOB264L combines advanced trench MOSFET technology with a low resistance package to ID (at VGS=10V) 140A provide extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V) < 3.2mΩ (< 3.0mΩ∗) converters and synchronous rectifiers for consumer, RDS(ON) (at VGS = 6V) < 3.

5.6. aob2608l.pdf Size:289K _aosemi

AOB262L
AOB262L

AOT2608L/AOB2608L 60V N-Channel MOSFET General Description Product Summary VDS The AOT2608L/AOB2608L uses Trench MOSFET 60V ID (at VGS=10V) 72A technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both RDS(ON) (at VGS=10V) < 8.0mΩ (< 7.6mΩ∗) conduction and switching power losses are minimized due to an extremely low combinatio

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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