All MOSFET. AOB280L Datasheet

 

AOB280L MOSFET. Datasheet pdf. Equivalent

Type Designator: AOB280L

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 333 W

Maximum Drain-Source Voltage |Vds|: 80 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.4 V

Maximum Drain Current |Id|: 140 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 23 nS

Drain-Source Capacitance (Cd): 1315 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0022 Ohm

Package: TO-263

AOB280L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOB280L Datasheet (PDF)

0.1. aot280l aob280l.pdf Size:269K _aosemi

AOB280L
AOB280L

AOT280L/AOB280L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

0.2. aob280l.pdf Size:269K _aosemi

AOB280L
AOB280L

AOT280L/AOB280L80V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT280L/AOB280L uses Trench MOSFET 80V ID (at VGS=10V) 140Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

 0.3. aob280l.pdf Size:238K _inchange_semiconductor

AOB280L
AOB280L

isc N-Channel MOSFET Transistor AOB280LFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 2.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
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