AOB410L MOSFET. Datasheet pdf. Equivalent
Type Designator: AOB410L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 333 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 107 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 594 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0062 Ohm
Package: TO-263
AOB410L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOB410L Datasheet (PDF)
aob410l.pdf
AOT410L/AOB410L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT410L/AOB410L is fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 150Agate charge & low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)
aob410l.pdf
isc N-Channel MOSFET Transistor AOB410LFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 6.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
aob416.pdf
AOB416100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOB416 is fabricated with SDMOSTM trench 45A ID (at VGS=10V)technology that combines excellent RDS(ON) with low gate
aob418l.pdf
AOT418L/AOB418L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT418L/AOB418L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D
aob4184.pdf
AOB418440V N-Channel MOSFETGeneral Description FeaturesThe AOB4184 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate VDS (V) =40Vcharge. With the excellent thermal resistance of the ID = 50 A (VGS = 10V)D2PAK package, this device is well suited for high RDS(ON)
aot412 aob412l.pdf
AOT412/AOB412L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT412 & AOB412L are fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with ID (at VGS=10V) 60Alow gate charge & low Qrr.The result is outstanding RDS(ON) (at VGS=10V)
aob412l.pdf
AOT412/AOB412L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT412 & AOB412L are fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with ID (at VGS=10V) 60Alow gate charge & low Qrr.The result is outstanding RDS(ON) (at VGS=10V)
aob414.pdf
AOB414TMN-Channel SDMOS Power TransistorGeneral Description Product SummaryVDS100VThe AOB414/L is fabricated with SDMOSTM trench ID (at VGS=10V) 51Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)
aob411l.pdf
AOB411L60V P-Channel MOSFETGeneral Description Product SummaryVDSThe AOB411L combines advanced trench MOSFET -60V-78Atechnology with a low resistance package to provide ID (at VGS=-10V)extremely low RDS(ON).This device is ideal for boost
aob418.pdf
AOT418L/AOB418L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT418L/AOB418L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D
aob416.pdf
isc N-Channel MOSFET Transistor AOB416FEATURESDrain Current I = 45A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 36m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera
aob418l.pdf
isc N-Channel MOSFET Transistor AOB418LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
aob4184.pdf
isc N-Channel MOSFET Transistor AOB4184FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 10.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
aob412l.pdf
isc N-Channel MOSFET Transistor AOB412LFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 15.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen
aob414.pdf
isc N-Channel MOSFET Transistor AOB414FEATURESDrain Current I = 51A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera
aob411l.pdf
isc P-Channel MOSFET Transistor AOB411LFEATURESDrain Current I = -78A@ T =25D CDrain Source Voltage-: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R = 16.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andge
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRLML0060TRPBF
History: IRLML0060TRPBF
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