AOB412L MOSFET. Datasheet pdf. Equivalent

   Type Designator: AOB412L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
   Package: TO-263

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AOB412L Datasheet (PDF)

..1. Size:313K aosemi
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AOT412/AOB412L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT412 & AOB412L are fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with ID (at VGS=10V) 60Alow gate charge & low Qrr.The result is outstanding RDS(ON) (at VGS=10V)

..2. Size:313K aosemi
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..3. Size:238K inchange semiconductor
aob412l.pdf pdf_icon

isc N-Channel MOSFET Transistor AOB412LFEATURESDrain Current I = 60A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 15.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

9.1. Size:268K aosemi
aob416.pdf pdf_icon

AOB416100V N-Channel MOSFETTMSDMOSGeneral Description Product SummaryVDS100VThe AOB416 is fabricated with SDMOSTM trench 45A ID (at VGS=10V)technology that combines excellent RDS(ON) with low gate

9.2. Size:296K aosemi
aob418l.pdf pdf_icon

AOT418L/AOB418L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT418L/AOB418L is fabricated with SDMOSTM VDS105Atrench technology that combines excellent RDS(ON) with low I (at VGS=10V)D

9.3. Size:177K aosemi
aob4184.pdf pdf_icon

AOB418440V N-Channel MOSFETGeneral Description FeaturesThe AOB4184 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate VDS (V) =40Vcharge. With the excellent thermal resistance of the ID = 50 A (VGS = 10V)D2PAK package, this device is well suited for high RDS(ON)

9.4. Size:344K aosemi
aob410l.pdf pdf_icon

AOT410L/AOB410L100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOT410L/AOB410L is fabricated with SDMOSTM VDStrench technology that combines excellent RDS(ON) with low ID (at VGS=10V) 150Agate charge & low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

9.5. Size:350K aosemi
aob414.pdf pdf_icon

AOB414TMN-Channel SDMOS Power TransistorGeneral Description Product SummaryVDS100VThe AOB414/L is fabricated with SDMOSTM trench ID (at VGS=10V) 51Atechnology that combines excellent RDS(ON) with low gatecharge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

9.6. Size:326K aosemi
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AOB411L60V P-Channel MOSFETGeneral Description Product SummaryVDSThe AOB411L combines advanced trench MOSFET -60V-78Atechnology with a low resistance package to provide ID (at VGS=-10V)extremely low RDS(ON).This device is ideal for boost

9.7. Size:296K aosemi
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9.8. Size:238K inchange semiconductor
aob416.pdf pdf_icon

isc N-Channel MOSFET Transistor AOB416FEATURESDrain Current I = 45A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 36m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

9.9. Size:239K inchange semiconductor
aob418l.pdf pdf_icon

isc N-Channel MOSFET Transistor AOB418LFEATURESDrain Current I = 105A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 9.7m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

9.10. Size:238K inchange semiconductor
aob4184.pdf pdf_icon

isc N-Channel MOSFET Transistor AOB4184FEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 10.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene

9.11. Size:238K inchange semiconductor
aob410l.pdf pdf_icon

isc N-Channel MOSFET Transistor AOB410LFEATURESDrain Current I = 150A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 6.2m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

9.12. Size:237K inchange semiconductor
aob414.pdf pdf_icon

isc N-Channel MOSFET Transistor AOB414FEATURESDrain Current I = 51A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera

9.13. Size:236K inchange semiconductor
aob411l.pdf pdf_icon

isc P-Channel MOSFET Transistor AOB411LFEATURESDrain Current I = -78A@ T =25D CDrain Source Voltage-: V = -60V(Min)DSSStatic Drain-Source On-Resistance: R = 16.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andge

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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AOB412L MOSFET. Datasheet pdf. Equivalent

AOB412L Datasheet (PDF)

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