AOC2401 Specs and Replacement
Type Designator: AOC2401
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 158 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: ALPHADFN1.57X1.57
AOC2401 substitution
- MOSFET ⓘ Cross-Reference Search
AOC2401 datasheet
aoc2401.pdf
AOC2401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOC2401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V) ... See More ⇒
aoc2403.pdf
AOC2403 20V P-Channel MOSFET General Description Product Summary Vds -20V ID (at VGS=-4.5V) -1.8A The AOC2403 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V) ... See More ⇒
aoc2414.pdf
AOC2414 8V N-Channel MOSFET General Description Product Summary VDS 8V The AOC2414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 4.5A with gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V) ... See More ⇒
aoc2413.pdf
AOC2413 8V P-Channel MOSFET General Description Product Summary VDS -8V The AOC2413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -3.5A with gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V) ... See More ⇒
Detailed specifications: AOB462L, AOB466L, AOB470L, AOB480L, AOB482L, AOB4S60, AOB7S60, AOB7S65, STP80NF70, AOC2403, AOC2411, AOC2412, AOC2413, AOC2414, AOC2415, AOC2417, AOC2421
Keywords - AOC2401 MOSFET specs
AOC2401 cross reference
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History: STP45L01F | MTP12N18 | AP3989R
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