AOC2403 MOSFET: P-Ch, 20V, 1.8A. Full specification with pinout and replacement list

..1. Size:209K aosemi
aoc2403.pdf pdf_icon

AOC2403 20V P-Channel MOSFET General Description Product Summary Vds -20V ID (at VGS=-4.5V) -1.8A The AOC2403 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V) ... See More ⇒

8.1. Size:256K aosemi
aoc2401.pdf pdf_icon

AOC2401 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOC2401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V) ... See More ⇒

9.1. Size:260K aosemi
aoc2414.pdf pdf_icon

AOC2414 8V N-Channel MOSFET General Description Product Summary VDS 8V The AOC2414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 4.5A with gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V) ... See More ⇒

9.2. Size:256K aosemi
aoc2413.pdf pdf_icon

AOC2413 8V P-Channel MOSFET General Description Product Summary VDS -8V The AOC2413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -3.5A with gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V) ... See More ⇒

9.3. Size:240K aosemi
aoc2422.pdf pdf_icon

AOC2422 8V N-Channel MOSFET General Description Product Summary VDS 8V The AOC2422 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 3.5A with gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V) ... See More ⇒

9.4. Size:253K aosemi
aoc2417.pdf pdf_icon

AOC2417 20V P-Channel MOSFET General Description Product Summary VDS -20V The AOC2417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3.5A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V) ... See More ⇒

9.5. Size:252K aosemi
aoc2415.pdf pdf_icon

AOC2415 20V P-Channel MOSFET General Description Product Summary VDS -20V The AOC2415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.5A with gate voltages as low as 1.5V while retaining a 8V RDS(ON) (at VGS=-4.5V) ... See More ⇒

9.6. Size:253K aosemi
aoc2421.pdf pdf_icon

AOC2421 8V P-Channel MOSFET General Description Product Summary VDS -8V The AOC2421 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -2.5A with gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V) ... See More ⇒

9.7. Size:251K aosemi
aoc2423.pdf pdf_icon

AOC2423 20V P-Channel MOSFET General Description Product Summary VDS -20V The AOC2423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -2A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V) ... See More ⇒

9.8. Size:223K aosemi
aoc2412.pdf pdf_icon

AOC2412 20V N-Channel MOSFET General Description Product Summary VDS 20V The AOC2412 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4.5A with gate voltages as low as 1.8V while retaining a 8V RDS(ON) (at VGS=4.5V) ... See More ⇒

9.9. Size:202K aosemi
aoc2411.pdf pdf_icon

AOC2411 30V P-Channel MOSFET General Description Product Summary Vds -30V ID (at VGS=-4.5V) -3.4A The AOC2411 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V) ... See More ⇒

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