AOC2411 MOSFET Datasheet: P-Ch, 30V, 3.4A. Full specification with pinout and replacement list

AOC2411 Specs and Replacement

Type Designator: AOC2411

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 167 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: WLCSP1.6X1.6

AOC2411 substitution

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AOC2411 datasheet

..1. Size:202K aosemi
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AOC2411 30V P-Channel MOSFET General Description Product Summary Vds -30V ID (at VGS=-4.5V) -3.4A The AOC2411 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V) ... See More ⇒

8.1. Size:260K aosemi
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AOC2414 8V N-Channel MOSFET General Description Product Summary VDS 8V The AOC2414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 4.5A with gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V) ... See More ⇒

8.2. Size:256K aosemi
aoc2413.pdf pdf_icon

AOC2413 8V P-Channel MOSFET General Description Product Summary VDS -8V The AOC2413 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -3.5A with gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V) ... See More ⇒

8.3. Size:253K aosemi
aoc2417.pdf pdf_icon

AOC2417 20V P-Channel MOSFET General Description Product Summary VDS -20V The AOC2417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3.5A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V) ... See More ⇒