AOC2411 Datasheet and Replacement
Type Designator: AOC2411
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 167 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: WLCSP1.6X1.6
AOC2411 substitution
AOC2411 Datasheet (PDF)
aoc2411.pdf

AOC241130V P-Channel MOSFETGeneral Description Product SummaryVds -30V ID (at VGS=-4.5V) -3.4AThe AOC2411 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)
aoc2414.pdf

AOC24148V N-Channel MOSFETGeneral Description Product SummaryVDS8VThe AOC2414 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 4.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V)
aoc2413.pdf

AOC24138V P-Channel MOSFETGeneral Description Product SummaryVDS-8VThe AOC2413 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -3.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V)
aoc2417.pdf

AOC241720V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2417 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3.5Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)
Datasheet: AOB470L , AOB480L , AOB482L , AOB4S60 , AOB7S60 , AOB7S65 , AOC2401 , AOC2403 , IRFZ24N , AOC2412 , AOC2413 , AOC2414 , AOC2415 , AOC2417 , AOC2421 , AOC2422 , AOC2423 .
History: AONR34332C | STB200NF04L | SVF12N65S | NP80N03MLE | PSMN010-55D | NP48N055MLE | FTP02N65B
Keywords - AOC2411 MOSFET datasheet
AOC2411 cross reference
AOC2411 equivalent finder
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History: AONR34332C | STB200NF04L | SVF12N65S | NP80N03MLE | PSMN010-55D | NP48N055MLE | FTP02N65B



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