All MOSFET. AOC2806 Datasheet

 

AOC2806 Datasheet and Replacement


   Type Designator: AOC2806
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3000 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: ALPHADFN1.7X1.7
 

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AOC2806 Datasheet (PDF)

 ..1. Size:359K  aosemi
 aoc2806.pdf pdf_icon

AOC2806

AOC280620V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) IS (at VGS=4.5V) 4.5A With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 8.1. Size:244K  aosemi
 aoc2800.pdf pdf_icon

AOC2806

AOC2800Common-Drain Dual N-Channel Enhancement Mode FieldEffect TransistorGeneral Description Product SummaryVss 30VThe AOC2800 uses advanced trench technology to provide ID (at VGS=4.5V) 6Aexcellent RSS(ON), low gate charge and operation with gate RSS(ON) (at VGS=4.5V)

 8.2. Size:363K  aosemi
 aoc2804.pdf pdf_icon

AOC2806

AOC280420V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) IS (at VGS=4.5V) 4A With ESD protection to improve battery performance and safety RSS(ON) (at VGS=4.5V)

 8.3. Size:353K  aosemi
 aoc2804b.pdf pdf_icon

AOC2806

AOC2804B20V Common-Drain Dual N-Channel AlphaMOSGeneral Description Product SummaryVSS Trench Power AlphaMOS (MOS LV) technology 20V Low RSS(ON) Fully protected AlphaDFN package RSS(ON) (at VGS=4.5V)

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Datasheet: AOC2415 , AOC2417 , AOC2421 , AOC2422 , AOC2423 , AOC2800 , AOC2802 , AOC2804 , 18N50 , AOC4810 , AOD11S60 , AOD1N60 , AOD200 , AOD208 , AOD210 , AOD2210 , AOD240 .

Keywords - AOC2806 MOSFET datasheet

 AOC2806 cross reference
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