AOD200 Datasheet and Replacement
Type Designator: AOD200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 2.1 nS
Cossⓘ - Output Capacitance: 470 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
Package: TO-252
AOD200 substitution
AOD200 Datasheet (PDF)
aod200.pdf

AOD20030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOD200 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 36Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aod200.pdf

isc N-Channel MOSFET Transistor AOD200FEATURESDrain Current I =36A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 7.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aod208.pdf

AOD20830V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD208 uses Trench MOSFET technology that 30V54Ais uniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance. Power losses are
aod208.pdf

isc N-Channel MOSFET Transistor AOD208FEATURESDrain Current I =54A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
Datasheet: AOC2423 , AOC2800 , AOC2802 , AOC2804 , AOC2806 , AOC4810 , AOD11S60 , AOD1N60 , IRF2807 , AOD208 , AOD210 , AOD2210 , AOD240 , AOD242 , AOD254 , AOD2544 , AOD256 .
Keywords - AOD200 MOSFET datasheet
AOD200 cross reference
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History: RW1C015UN | GSM2379



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