AOD200
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD200
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 36
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 2.1
nS
Cossⓘ -
Output Capacitance: 470
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078
Ohm
Package:
TO-252
AOD200
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOD200
Datasheet (PDF)
..1. Size:394K aosemi
aod200.pdf 
AOD20030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOD200 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 36Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
..2. Size:265K inchange semiconductor
aod200.pdf
isc N-Channel MOSFET Transistor AOD200FEATURESDrain Current I =36A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 7.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
9.1. Size:236K aosemi
aod208.pdf
AOD20830V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD208 uses Trench MOSFET technology that 30V54Ais uniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance. Power losses are
9.2. Size:265K inchange semiconductor
aod208.pdf
isc N-Channel MOSFET Transistor AOD208FEATURESDrain Current I =54A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
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