AOD208 Datasheet and Replacement
Type Designator: AOD208
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 62 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 54 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 720 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
Package: TO-252
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AOD208 Datasheet (PDF)
aod208.pdf

AOD20830V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD208 uses Trench MOSFET technology that 30V54Ais uniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance. Power losses are
aod208.pdf

isc N-Channel MOSFET Transistor AOD208FEATURESDrain Current I =54A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aod200.pdf

AOD20030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOD200 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 36Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
aod200.pdf

isc N-Channel MOSFET Transistor AOD200FEATURESDrain Current I =36A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 7.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CHM85A3PAGP | TK7P65W | SFFX054Z
Keywords - AOD208 MOSFET datasheet
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History: CHM85A3PAGP | TK7P65W | SFFX054Z



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