All MOSFET. AOD210 Datasheet

 

AOD210 Datasheet and Replacement


   Type Designator: AOD210
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-252
 

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AOD210 Datasheet (PDF)

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AOD210

AOD21030V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD210 uses Trench MOSFET technology that 30V70Ais uniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance. Power losses are

 ..2. Size:264K  inchange semiconductor
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AOD210

isc N-Channel MOSFET Transistor AOD210FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 0.1. Size:491K  aosemi
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AOD210

AOD210V60ETM600V, a MOSE N-Channel Power TransistorGeneral Description Product Summary Excellent RDS(ON)*A VDS @ Tj,max 700V Optimized switching parameters for better EMI IDM 45A performance RDS(ON),max

 9.1. Size:331K  aosemi
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AOD210

AOD2146TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 54A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

Datasheet: AOC2802 , AOC2804 , AOC2806 , AOC4810 , AOD11S60 , AOD1N60 , AOD200 , AOD208 , IRF830 , AOD2210 , AOD240 , AOD242 , AOD254 , AOD2544 , AOD256 , AOD2606 , AOD2610 .

History: AOD402 | ME4468 | MMBF4118 | SSW4668 | NCE1013E | SPA65R38G | IRF6713S

Keywords - AOD210 MOSFET datasheet

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