AOD210 Datasheet and Replacement
Type Designator: AOD210
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 1320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO-252
AOD210 substitution
AOD210 Datasheet (PDF)
aod210.pdf

AOD21030V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD210 uses Trench MOSFET technology that 30V70Ais uniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance. Power losses are
aod210.pdf

isc N-Channel MOSFET Transistor AOD210FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aod210v60e.pdf

AOD210V60ETM600V, a MOSE N-Channel Power TransistorGeneral Description Product Summary Excellent RDS(ON)*A VDS @ Tj,max 700V Optimized switching parameters for better EMI IDM 45A performance RDS(ON),max
aod2146.pdf

AOD2146TM40V N-Channel AlphaSGTGeneral Description Product SummaryVDS40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 54A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
Datasheet: AOC2802 , AOC2804 , AOC2806 , AOC4810 , AOD11S60 , AOD1N60 , AOD200 , AOD208 , IRF830 , AOD2210 , AOD240 , AOD242 , AOD254 , AOD2544 , AOD256 , AOD2606 , AOD2610 .
History: AOD402 | ME4468 | MMBF4118 | SSW4668 | NCE1013E | SPA65R38G | IRF6713S
Keywords - AOD210 MOSFET datasheet
AOD210 cross reference
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History: AOD402 | ME4468 | MMBF4118 | SSW4668 | NCE1013E | SPA65R38G | IRF6713S



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