All MOSFET. AOD2916 Datasheet

 

AOD2916 Datasheet and Replacement


   Type Designator: AOD2916
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: TO-252
 

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AOD2916 Datasheet (PDF)

 ..1. Size:293K  aosemi
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AOD2916

AOD2916100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD2916 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 25Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 ..2. Size:265K  inchange semiconductor
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AOD2916

isc N-Channel MOSFET Transistor AOD2916FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =34m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 8.1. Size:372K  aosemi
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AOD2916

AOD2910E100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 37A Low Gate Charge RDS(ON) (at VGS=10V)

 8.2. Size:311K  aosemi
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AOD2916

AOD2910100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD2910 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 31Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

Datasheet: AOD2544 , AOD256 , AOD2606 , AOD2610 , AOD2810 , AOD2816 , AOD2908 , AOD2910 , AON7403 , AOD2922 , AOD2N100 , AOD2N60 , AOD2N60A , AOD3N40 , AOD3N50 , AOD3N60 , AOD3N80 .

History: MS4N60 | MTB050N15J3

Keywords - AOD2916 MOSFET datasheet

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