AOD2922 Specs and Replacement
Type Designator: AOD2922
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ -
Output Capacitance: 19 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO-252
- MOSFET ⓘ Cross-Reference Search
AOD2922 datasheet
..1. Size:287K aosemi
aod2922.pdf 
AOD2922 100V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 7A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
..2. Size:261K inchange semiconductor
aod2922.pdf 
Isc N-Channel MOSFET Transistor AOD2922 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag... See More ⇒
9.1. Size:267K aosemi
aod2908.pdf 
AOD2908 100V N-Channel MOSFET General Description Product Summary VDS The AOD2908 uses Trench MOSFET technology that is 100V uniquely optimized to provide the most efficient high ID (at VGS=10V) 52A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒
9.2. Size:293K aosemi
aod2916.pdf 
AOD2916 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD2916 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 25A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒
9.3. Size:372K aosemi
aod2910e.pdf 
AOD2910E 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 37A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.4. Size:612K aosemi
aod296a aoi296a.pdf 
AOD296A/AOI296A TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
9.5. Size:364K aosemi
aod296a.pdf 
AOD296A/AOI296A TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
9.6. Size:600K aosemi
aod294a aoi294a.pdf 
AOD294A/AOI294A TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 55A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
9.7. Size:374K aosemi
aod294a.pdf 
AOD294A/AOI294A TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 55A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
9.8. Size:260K aosemi
aod2904.pdf 
AOD2904 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
9.9. Size:311K aosemi
aod2910.pdf 
AOD2910 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOD2910 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 31A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V) ... See More ⇒
9.10. Size:208K inchange semiconductor
aod2908.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOD2908 FEATURES With TO-252(DPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply LED backlighting Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
9.11. Size:265K inchange semiconductor
aod2916.pdf 
isc N-Channel MOSFET Transistor AOD2916 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =34m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒
9.12. Size:211K inchange semiconductor
aod2910e.pdf 
INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOD2910E FEATURES With TO-252( DPAK ) packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Industrial and motor drive applications DC/DC and AC/DC conver... See More ⇒
9.13. Size:249K inchange semiconductor
aod296a.pdf 
isc N-Channel MOSFET Transistor AOD296A FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 8.3m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene... See More ⇒
9.14. Size:265K inchange semiconductor
aod294a.pdf 
isc N-Channel MOSFET Transistor AOD294A FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒
9.15. Size:242K inchange semiconductor
aod2904.pdf 
isc N-Channel MOSFET Transistor AOD2904 FEATURES Static drain-source on-resistance RDS(on) 10m @10V 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒
9.16. Size:249K inchange semiconductor
aod2910.pdf 
isc N-Channel MOSFET Transistor AOD2910 FEATURES Drain Current I = 31A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 24m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener... See More ⇒
Detailed specifications: AOD256, AOD2606, AOD2610, AOD2810, AOD2816, AOD2908, AOD2910, AOD2916, IRFB7545, AOD2N100, AOD2N60, AOD2N60A, AOD3N40, AOD3N50, AOD3N60, AOD3N80, AOD3T40P
Keywords - AOD2922 MOSFET specs
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