AOD2922
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD2922
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 17
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7
V
|Id|ⓘ - Maximum Drain Current: 7
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 19
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14
Ohm
Package:
TO-252
AOD2922
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOD2922
Datasheet (PDF)
..1. Size:287K aosemi
aod2922.pdf 
AOD2922100V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS MV) technology 100V Very Low RDS(ON) ID (at VGS=10V) 7A Low Gate Charge RDS(ON) (at VGS=10V)
..2. Size:261K inchange semiconductor
aod2922.pdf
Isc N-Channel MOSFET Transistor AOD2922FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag
9.1. Size:267K aosemi
aod2908.pdf
AOD2908 100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD2908 uses Trench MOSFET technology that is 100Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 52Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.2. Size:293K aosemi
aod2916.pdf
AOD2916100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD2916 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 25Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.3. Size:372K aosemi
aod2910e.pdf
AOD2910E100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 37A Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:364K aosemi
aod296a.pdf
AOD296A/AOI296ATM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
9.5. Size:374K aosemi
aod294a.pdf
AOD294A/AOI294ATM 100V N-Channel AlphaSGTGeneral Description Product SummaryVDS100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 55A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)
9.6. Size:260K aosemi
aod2904.pdf
AOD2904100V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)
9.7. Size:311K aosemi
aod2910.pdf
AOD2910100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD2910 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 31Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
9.8. Size:208K inchange semiconductor
aod2908.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD2908FEATURESWith TO-252(DPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyLED backlightingMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY
9.9. Size:265K inchange semiconductor
aod2916.pdf
isc N-Channel MOSFET Transistor AOD2916FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =34m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.10. Size:211K inchange semiconductor
aod2910e.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOD2910EFEATURESWith TO-252( DPAK ) packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyIndustrial and motor drive applicationsDC/DC and AC/DC conver
9.11. Size:249K inchange semiconductor
aod296a.pdf
isc N-Channel MOSFET Transistor AOD296AFEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 8.3m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgene
9.12. Size:265K inchange semiconductor
aod294a.pdf
isc N-Channel MOSFET Transistor AOD294AFEATURESDrain Current I = 55A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.13. Size:242K inchange semiconductor
aod2904.pdf
isc N-Channel MOSFET Transistor AOD2904FEATURESStatic drain-source on-resistance:RDS(on)10m@10V100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectification in DC/DC and AC/DC ConvertersIndustrial and Motor Drive applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
9.14. Size:249K inchange semiconductor
aod2910.pdf
isc N-Channel MOSFET Transistor AOD2910FEATURESDrain Current I = 31A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgener
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