All MOSFET. AOD407 Datasheet

 

AOD407 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOD407

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 12 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 10 nS

Drain-Source Capacitance (Cd): 114 pF

Maximum Drain-Source On-State Resistance (Rds): 0.115 Ohm

Package: TO-252

AOD407 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOD407 Datasheet (PDF)

1.1. aod407.pdf Size:154K _aosemi

AOD407
AOD407

AOD407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD407 uses advanced trench technology to VDS (V) = -60V provide excellent RDS(ON), low gate charge and low ID = -12A (VGS = -10V) gate resistance. With the excellent thermal resistance RDS(ON) < 115mΩ (VGS = -10V) of the DPAK package, this device is well suited for RDS(ON) < 150mΩ (VGS =

5.1. aod402.pdf Size:244K _update

AOD407
AOD407

AOD402 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD402 uses advanced trench technology and VDS (V) = 30V design to provide excellent RDS(ON) with low gate ID = 18 A (VGS = 20V) charge. This device is suitable for use in PWM, laod RDS(ON) < 15 mΩ (VGS = 20V) switching and general purpose applications. RDS(ON) < 18 mΩ (VGS = 10V) RDS(ON) <

5.2. aod400.pdf Size:210K _update

AOD407
AOD407

AOD400 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD400 uses advanced trench technology and VDS (V) = 30V design to provide excellent RDS(ON) with low gate ID = 10 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON) < 30 mΩ (VGS = 10V) switching and general purpose applications. RDS(ON) < 36 mΩ (VGS = 4.5V) RDS(ON) <

5.3. aod408.pdf Size:111K _update

AOD407
AOD407

AOD408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD408 uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON) and low gate charge. This device is ID = 18A (VGS = 10V) suitable for use as a load switch or in PWM applications. RDS(ON) < 18mΩ (VGS = 10V) Standard Product AOD408 is Pb-free (meets ROHS & RDS(ON) < 27mΩ (V

5.4. aod406.pdf Size:196K _update

AOD407
AOD407

AOD406 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD406 uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON), shoot-through immunity and body diode ID = 85A (VGS = 10V) characteristics. This device is ideally suited for use as a low RDS(ON) < 5.0mΩ (VGS = 10V) side switch in CPU core power conversion. RDS(ON) < 5.7mΩ (

5.5. aod404.pdf Size:195K _update

AOD407
AOD407

AOD404 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD404 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate chargeand low ID = 85A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON) < 7mΩ (VGS = 10V) as a high side switch in CPU core power conversion. RDS(ON) < 8mΩ (VGS = 4.5V) -RoHS

5.6. aod409g.pdf Size:317K _aosemi

AOD407
AOD407

AOD409G 60V P-Channel MOSFET General Description Product Summary VDS • Trench Power MOSFET technology -60V • Low RDS(ON) ID (at VGS=-10V) -28A • Logic Level Driving RDS(ON) (at VGS=-10V) < 40mΩ • RoHS and Halogen-Free Compliant RDS(ON) (at VGS=-4.5V) < 55mΩ Applications 100% UIS Tested 100% Rg Tested • Industrial and Motor Drive applications TO252 DPAK D T

5.7. aod403.pdf Size:398K _aosemi

AOD407
AOD407

AOD403/AOI403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate ID (at VGS= -20V) -70A resistance. With the excellent thermal resistance of the RDS(ON) (at VGS= -20V) < 6.2mΩ (< 6.7mΩ∗) DPAK/IPAK package, this device is well suited for high RDS(ON) (at

5.8. aod409.pdf Size:383K _aosemi

AOD407
AOD407

AOD409/AOI409 60V P-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology -60V • Low RDS(ON) ID (at VGS=-10V) -26A • Low Gate Charge RDS(ON) (at VGS=-10V) < 40mΩ • Optimized for fast-switching applications RDS(ON) (at VGS=-4.5V) < 55mΩ Applications 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Conv

Datasheet: AOD2N60 , AOD2N60A , AOD3N40 , AOD3N50 , AOD3N60 , AOD3N80 , AOD3T40P , AOD403 , 2SK2837 , AOD409 , AOD4102 , AOD4120 , AOD4124 , AOD4126 , AOD4128 , AOD4130 , AOD4132 .

 


AOD407
  AOD407
  AOD407
 

social 

LIST

Last Update

MOSFET: IRLL2703PBF | IRLL110TRPBF | IRLL024ZPBF | IRLL024NPBF | IRLL014PBF | IRLL014NPBF | IRLL3303PBF | IRLL2705PBF | IRF200B211 | IRF1902PBF | IRF1704 | IRF1607PBF | IRF150SMD | IRF150C | IRF150B |