AOD4124 MOSFET. Datasheet pdf. Equivalent

AOD4124 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AOD4124 Datasheet (PDF)

1.1. aod4124.pdf Size:263K _aosemi

AOD4124 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AOD4124 is fabricated with SDMOSTM trench 54A ID (at VGS=10V) technology that combines excellent RDS(ON) with low gate < 21mΩ charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) with controlled switching behavior. This universal < 25mΩ RDS(ON) (at VGS = 7V)

4.1. aod4126.pdf Size:457K _aosemi

AOD4126/AOI4126 100V N-Channel MOSFET TM SDMOS General Description Product Summary 100V The AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43A trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V) < 24mΩ controlled switching behavior. This universal technology is RDS(ON) (at VGS = 7

4.2. aod4128.pdf Size:144K _aosemi

AOD4128 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4128 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. VDS (V) = 25V This device is ideally suited for use as a low side switch in ID = 60 A (VGS = 10V) CPU core power conversion. The device can also be used RDS(ON) < 4 mΩ (VGS = 10V) i

4.3. aod4120.pdf Size:173K _aosemi

AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4 General Description Features The AOD4120 uses advanced trench technology and VDS (V) = 20V design to provide excellent RDS(ON) with low gate ID = 25A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON) <18 mΩ (VGS = 10V) switching and general purpose applications. RDS(ON) <25 mΩ (VGS = 4.5V) RDS

LIST

Last Update

MOSFET: 2SK1024-01 | 2SK1023-01 | 2SK1022 | 2SK1021 | 2SK1020 | 2SK1018 | 2SK1017-01 | 2SK1016-01 | 2SK1015-01 | 2SK1015 | 2SK1014-01 | 2SK1012-01 | 2SK1011-01 | 2SK957-MR | 2SK957-M |