AOD421 Datasheet and Replacement

AOD421P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD421 uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge andID = -12.5 A (VGS = -10V)operation with gate voltages as low as 2.5V. ThisRDS(ON)

isc P-Channel MOSFET Transistor AOD421FEATURESDrain Current I = -12.5A@ T =25D CDrain Source Voltage-: V = -20V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

AOD4286/AOI4286100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD4286, AOI4286 uses trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 14Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

AOD420N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD420 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON) and low gate charge. ThisID = 10A (VGS = 10V)device is suitable for use as a load switch or in PWMRDS(ON)

AOD423/AOI423/AOY42330V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOD423/AOI423/AOY423 uses advanced trenchtechnology to provide excellent RDS(ON), low gate charge ID (at VGS= -20V) -70Aand low gate resistance. With the excellent thermal RDS(ON) (at VGS= -20V)

AOD424G20V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 46A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)

AOD4286/AOI4286100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD4286, AOI4286 uses trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 14Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

AOD42420V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AOD424 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=4.5V) 45Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V)

AOD425P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD425 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge VDS (V) = -30Vwith a 25V gate rating. This device is suitable for use ID = -50A (VGS = -10V)as a load switch or in PWM applications. The device is RDS(ON)

AOD42220V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AOD422 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=4.5V) 20Avoltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS=4.5V)

AOD425www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 40 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.025 at VGS = - 4.5 V - 35APPLICATIONS Load Switch Battery SwitchSTO-252 GDG D S P-Channel MOSFETABSO

AOD422www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLUT

Isc N-Channel MOSFET Transistor AOD4286FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

INCHANGE Semiconductorisc P-Channel MOSFET Transistor AOD423FEATURESWith TO-252( DPAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RA

isc N-Channel MOSFET Transistor AOD424GFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =20V(Min)DSSStatic Drain-Source On-Resistance: R = 4.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor AOD424FEATURESDrain Current I = 45A@ T =25D CDrain Source Voltage-: V =20V(Min)DSSStatic Drain-Source On-Resistance: R = 4.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc P-Channel MOSFET Transistor AOD425FEATURESDrain Current I = -50A@ T =25D CDrain Source Voltage-: V = -30V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

isc N-Channel MOSFET Transistor AOD422FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 20V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose