AOD4504
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD4504
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 42.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.7
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 44
nC
trⓘ - Rise Time: 3.5
nS
Cossⓘ -
Output Capacitance: 20.5
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4
Ohm
Package:
TO-252
AOD4504
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOD4504
Datasheet (PDF)
..1. Size:285K aosemi
aod4504.pdf 
AOD4504200V N-Channel MOSFETGeneral Description Product SummaryVDS200VThe AOD4504 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 6Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)
..2. Size:265K inchange semiconductor
aod4504.pdf
isc N-Channel MOSFET Transistor AOD4504FEATURESDrain Current I = 6A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
8.1. Size:242K aosemi
aod450.pdf
AOD450200V N-Channel MOSFETGeneral Description Product SummaryVDS200VThe AOD450 uses advanced trench technology anddesign to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 3.8AThis device is suitable for use in inverter, load switching RDS(ON) (at VGS=10V)
8.2. Size:683K aosemi
aod450a70.pdf
AOD450A70/AOI450A70TM700V, aMOS5 N-Channel Power TransistorGeneral Description Product Summary VDS @ Tj,max 800V Proprietary aMOS5TM technology Low RDS(ON) IDM 44A Optimized switching parameters for better EMI RDS(ON),max
8.3. Size:265K inchange semiconductor
aod450.pdf
isc N-Channel MOSFET Transistor AOD450FEATURESDrain Current I = 3.8A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.7(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
