AOD474B MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD474B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 28.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.132 Ohm
Package: TO-252
AOD474B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOD474B Datasheet (PDF)
aod474b.pdf
AOD474B75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD474B combines advanced trench MOSFET 75Vtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
aod474.pdf
AOD47475V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD474 combines advanced trench MOSFET 75Vtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
aod474a.pdf
AOD474A75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD474A combines advanced trench MOSFET 75Vtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)
aod474.pdf
isc N-Channel MOSFET Transistor AOD474FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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