All MOSFET. AOD478 Datasheet

 

AOD478 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOD478
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 45 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2.8 V
   Maximum Drain Current |Id|: 11 A
   Maximum Junction Temperature (Tj): 175 °C
   Rise Time (tr): 3 nS
   Drain-Source Capacitance (Cd): 29 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.14 Ohm
   Package: TO-252

 AOD478 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOD478 Datasheet (PDF)

 ..1. Size:422K  aosemi
aod478 aoi478.pdf

AOD478 AOD478

AOD478/AOI478100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD478/AOI478 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 11Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

 ..2. Size:422K  aosemi
aod478.pdf

AOD478 AOD478

AOD478/AOI478100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD478/AOI478 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 11Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

 ..3. Size:265K  inchange semiconductor
aod478.pdf

AOD478 AOD478

isc N-Channel MOSFET Transistor AOD478FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

 9.1. Size:289K  aosemi
aod474b.pdf

AOD478 AOD478

AOD474B75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD474B combines advanced trench MOSFET 75Vtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

 9.2. Size:208K  aosemi
aod476.pdf

AOD478 AOD478

AOD476N-Channel Enhancement Mode Field Effect Transistor1.4General Description FeaturesThe AOD476 uses advanced trench technology and VDS (V) = 20Vdesign to provide excellent RDS(ON) with low gateID = 25A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)

 9.3. Size:290K  aosemi
aod474.pdf

AOD478 AOD478

AOD47475V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD474 combines advanced trench MOSFET 75Vtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

 9.4. Size:154K  aosemi
aod472a.pdf

AOD478 AOD478

AOD472AN-Channel SDMOSTM POWER TransistorGeneral Description FeaturesVDS (V) = 25VThe AOD472A is fabricated with SDMOSTM trench ID = 55A (VGS = 10V)technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON)

 9.5. Size:288K  aosemi
aod474a.pdf

AOD478 AOD478

AOD474A75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD474A combines advanced trench MOSFET 75Vtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

 9.6. Size:145K  aosemi
aod472.pdf

AOD478 AOD478

AOD472N-Channel Enhancement Mode Field Effect Transistor1.4General Description FeaturesThe AOD472 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gate ID = 55A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 9.7. Size:789K  cn vbsemi
aod472.pdf

AOD478 AOD478

AOD472www.VBsemi.twN-Channel 20-V (D-S)175 _C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction TemperatureD 100% Rg Tested 0.006 @ VGS = 4.5 V 6520200.008 @ VGS = 2.5 V 45DTO-252GDrain Connected to TabG D STop View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramet

 9.8. Size:265K  inchange semiconductor
aod476.pdf

AOD478 AOD478

isc N-Channel MOSFET Transistor AOD476FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V =20V(Min)DSSStatic Drain-Source On-Resistance: R = 21m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

 9.9. Size:265K  inchange semiconductor
aod474.pdf

AOD478 AOD478

isc N-Channel MOSFET Transistor AOD474FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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