AOD486A MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD486A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 12.5 nS
Cossⓘ - Output Capacitance: 320 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
Package: TO-252
AOD486A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOD486A Datasheet (PDF)
aod486a.pdf
AOD486AN-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD486A uses advanced trench technology and VDS (V) = 40Vdesign to provide excellent RDS(ON) with low gate ID = 50 A (VGS = 10V)charge.This device is suitable for use in PWM, load RDS(ON)
aod482.pdf
AOD482/AOI482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD482/AOI482 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 32Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)
aod482 aoi482.pdf
AOD482/AOI482100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD482/AOI482 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 32Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)
aod484.pdf
AOD48430V N-Channel MOSFETGeneral Description FeaturesThe AOD484 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gateID = 25 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
aod488.pdf
AOD488N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD488 uses advanced trench technology and VDS (V) = 40Vdesign to provide excellent RDS(ON) with low gateID = 20 A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)
aod480.pdf
AOD48030V N-Channel MOSFET1.4General Description FeaturesVGS=10V, ID=18AThe AOD480 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gate ID = 25A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)
aod482.pdf
isc N-Channel MOSFET Transistor AOD482FEATURESDrain Current I =32A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 37m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
aod484.pdf
Isc N-Channel MOSFET Transistor AOD484FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
aod480.pdf
isc N-Channel MOSFET Transistor AOD480FEATURESDrain Current I =25A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 23m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose ap
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: TSA20N50M | IXTP08N50D2 | FDC6561AN | 2SK897-MR
History: TSA20N50M | IXTP08N50D2 | FDC6561AN | 2SK897-MR
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