AOD516
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOD516
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6
V
|Id|ⓘ - Maximum Drain Current: 46
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 4.8
nS
Cossⓘ -
Output Capacitance: 512
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005
Ohm
Package:
TO-252
AOD516
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOD516
Datasheet (PDF)
..1. Size:326K aosemi
aod516.pdf 
AOD516/AOI516/AOY51630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)
..2. Size:326K aosemi
aod516 aoi516 aoy516.pdf
AOD516/AOI516/AOY51630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)
..3. Size:262K inchange semiconductor
aod516.pdf
Isc N-Channel MOSFET Transistor AOD516FEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage
9.1. Size:312K aosemi
aod518.pdf
AOD518/AOI51830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 54A Low Gate Charge RDS(ON) (at VGS=10V)
9.2. Size:333K aosemi
aod514.pdf
AOD514/AOI514/AOY51430V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)
9.3. Size:511K aosemi
aod510 aoi510.pdf
AOD510/AOI51030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:310K aosemi
aod510.pdf
AOD510/AOI51030V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power AlphaMOS (MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)
9.5. Size:306K aosemi
aod512.pdf
AOD51230V N-Channel AlphaMOSGeneral Description Product SummaryVDS Latest Trench Power AlphaMOS (MOS LV) technology 30V Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 70A Low Gate Charge
9.6. Size:843K cn vbsemi
aod518.pdf
AOD518www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFETABSOLUTE
9.7. Size:278K inchange semiconductor
aod514.pdf
isc N-Channel MOSFET Transistor AOD514FEATURESStatic drain-source on-resistance:RDS(on)5.9m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC/DC Converters in ComputingIsolated DC/DC Converters in Telecom and IndustrialABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dr
9.8. Size:265K inchange semiconductor
aod510.pdf
isc N-Channel MOSFET Transistor AOD510FEATURESDrain Current I = 70A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
Datasheet: IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
