AOD528 Datasheet and Replacement
Type Designator: AOD528
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10.5 nS
Cossⓘ - Output Capacitance: 483 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: TO-252
AOD528 substitution
AOD528 Datasheet (PDF)
aod528.pdf

AOD52830V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
aod528.pdf

isc N-Channel MOSFET Transistor AOD528FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 5.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aod526.pdf

AOD52630V N-Channel AlphaMOSGeneral Description Product SummaryVDS30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 50A Low Gate Charge RDS(ON) (at VGS=10V)
aod522.pdf

AOD522www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLUT
Datasheet: AOD4T60P , AOD502 , AOD504 , AOD508 , AOD510 , AOD514 , AOD516 , AOD526 , STF13NM60N , AOD536 , AOD538 , AOD5N40 , AOD5N50 , AOD5T40P , AOD603A , AOD607 , AOD609 .
History: SRC65R024B | AM90N06-04M2B | AUIRFP4227 | VBZE04N03 | SSM3K56CT | IXTJ3N150 | UTC654
Keywords - AOD528 MOSFET datasheet
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History: SRC65R024B | AM90N06-04M2B | AUIRFP4227 | VBZE04N03 | SSM3K56CT | IXTJ3N150 | UTC654



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