AOD607 Specs and Replacement
Type Designator: AOD607
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.9(25) nS
Cossⓘ - Output Capacitance: 180(190) pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025(0.037) Ohm
Package: TO-252-4L
AOD607 substitution
AOD607 datasheet
aod607a.pdf
AOD607A 30V Complementary MOSFET General Description Product Summary Q1 Q2 VDS 30V -30V Trench Power MOSFET technology Low RDS(ON) ID (at VGS=10V) 8A -12A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒
aod609g.pdf
AOD609G Complementary Enhancement Mode Field Effect Transistor General Description Features The AOD609G uses advanced trench technology n-channel MOSFETs to provide excellent RDS(ON) and low gate VDS (V) = 40V, ID = 12A (VGS=10V) charge. The complementary MOSFETs may be used RDS(ON)... See More ⇒
aod600a60.pdf
AOD600A60/AOI600A60 TM 600V, aMOS5 N-Channel Power Transistor General Description Product Summary VDS @ Tj,max 700V Proprietary aMOS5TM technology Low RDS(ON) IDM 32A Optimized switching parameters for better EMI RDS(ON),max ... See More ⇒
Detailed specifications: AOD526 , AOD528 , AOD536 , AOD538 , AOD5N40 , AOD5N50 , AOD5T40P , AOD603A , AO3407 , AOD609 , AOD6N50 , AOD7N60 , AOD7N65 , AOD7S60 , AOD7S65 , AOD8N25 , AOD9N40 .
History: SVS65R240L8AD4TR | PSP13N50 | AOD464
Keywords - AOD607 MOSFET specs
AOD607 cross reference
AOD607 equivalent finder
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AOD607 substitution
AOD607 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: SVS65R240L8AD4TR | PSP13N50 | AOD464
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