AOD7N60 MOSFET Datasheet: N-Ch, 600V, 7A. Full specification with pinout and replacement list

AOD7N60 Specs and Replacement

Type Designator: AOD7N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 178 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 88 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO-252

AOD7N60 substitution

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AOD7N60 datasheet

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AOD7N60/AOI7N60 600V,7A N-Channel MOSFET General Description Product Summary The AOD7N60 & AOI7N60 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 700V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 7A popular AC-DC applications. RDS(ON) (at VGS=10V) ... See More ⇒

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..3. Size:265K inchange semiconductor
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isc N-Channel MOSFET Transistor AOD7N60 FEATURES Drain Current I = 7.0A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =1.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

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aod7n65 aoi7n65.pdf pdf_icon

AOD7N65/AOI7N65 650V,7A N-Channel MOSFET General Description Product Summary The AOD7N65 & AOI7N65 have been fabricated using an advanced high voltage MOSFET process that is designed VDS 750V@150 to deliver high levels of performance and robustness in ID (at VGS=10V) 7A popular AC-DC applications. RDS(ON) (at VGS=10V) ... See More ⇒