AOI1N60 Datasheet and Replacement
Type Designator: AOI1N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6.7 nS
Cossⓘ - Output Capacitance: 14.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm
Package: TO-251A
AOI1N60 substitution
AOI1N60 Datasheet (PDF)
aoi1n60.pdf
AOD1N60/AOU1N60/AOI1N60600V,1.3A N-Channel MOSFETGeneral Description Product SummaryThe AOD1N60 & AOU1N60 & AOI1N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 1.3Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aoi1n60.pdf
isc N-Channel MOSFET Transistor AOI1N60FEATURESDrain Current I =1.3A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 9.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
aoi1n60l.pdf
AOD1N60/AOU1N60/AOI1N60600V,1.3A N-Channel MOSFETGeneral Description Product SummaryThe AOD1N60 & AOU1N60 & AOI1N60 have beenfabricated using an advanced high voltage MOSFET VDS 700V@150process that is designed to deliver high levels of ID (at VGS=10V) 1.3Aperformance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
Datasheet: AOD8N25 , AOD9N40 , AOD9N50 , AOD9N52 , AOD9T40P , AOH3106 , AOH3110 , AOI11S60 , IRF830 , AOI208 , AOI2210 , AOI2N60 , AOI2N60A , AOI403 , AOI409 , AOI4102 , AOI4126 .
History: IMZA65R072M1H | IPA040N06NM5S | AONR21307
Keywords - AOI1N60 MOSFET datasheet
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History: IMZA65R072M1H | IPA040N06NM5S | AONR21307
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