AOI1N60 MOSFET Datasheet: N-Ch, 600V, 1.3A. Full specification with pinout and replacement list

AOI1N60 Specs and Replacement

Type Designator: AOI1N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.7 nS

Cossⓘ - Output Capacitance: 14.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 9 Ohm

Package: TO-251A

AOI1N60 substitution

- MOSFET ⓘ Cross-Reference Search

AOI1N60 datasheet

..1. Size:344K aosemi
aoi1n60.pdf pdf_icon

AOD1N60/AOU1N60/AOI1N60 600V,1.3A N-Channel MOSFET General Description Product Summary The AOD1N60 & AOU1N60 & AOI1N60 have been fabricated using an advanced high voltage MOSFET VDS 700V@150 process that is designed to deliver high levels of ID (at VGS=10V) 1.3A performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒

..2. Size:1393K aosemi
aod1n60 aou1n60 aoi1n60.pdf pdf_icon

..3. Size:274K inchange semiconductor
aoi1n60.pdf pdf_icon

isc N-Channel MOSFET Transistor AOI1N60 FEATURES Drain Current I =1.3A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 9.0 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose... See More ⇒

0.1. Size:344K aosemi
aoi1n60l.pdf pdf_icon