AOI4126
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOI4126
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 100
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 43
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 28
nC
trⓘ - Rise Time: 4
nS
Cossⓘ -
Output Capacitance: 165
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024
Ohm
Package: TO-251A
AOI4126
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOI4126
Datasheet (PDF)
..1. Size:457K aosemi
aoi4126.pdf 
AOD4126/AOI4126100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43Atrench technology that combines excellent RDS(ON) withlow gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)
..2. Size:457K aosemi
aod4126 aoi4126.pdf
AOD4126/AOI4126100V N-Channel MOSFETTMSDMOSGeneral Description Product Summary100VThe AOD4126&AOI4126 are fabricated with SDMOSTM VDS ID (at VGS=10V) 43Atrench technology that combines excellent RDS(ON) withlow gate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)
..3. Size:273K inchange semiconductor
aoi4126.pdf
isc N-Channel MOSFET Transistor AOI4126FEATURESDrain Current I = 43A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =24m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.1. Size:269K aosemi
aod4185 aoi4185.pdf
AOD4185/AOI4185P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4185/AOI4185 uses advanced trench VDS (V) = -40Vtechnology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V)charge. With the excellent thermal resistance of the RDS(ON)
9.2. Size:479K aosemi
aod4130 aoi4130.pdf
AOD4130/AOI413060V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AOD4130/AOI4130 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 30Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)
9.3. Size:269K aosemi
aoi4185.pdf
AOD4185/AOI4185P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD4185/AOI4185 uses advanced trench VDS (V) = -40Vtechnology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V)charge. With the excellent thermal resistance of the RDS(ON)
9.4. Size:344K aosemi
aoi4184.pdf
AOD4184/AOI418440V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AOD4184/AOI4184 used advanced trenchtechnology and design to provide excellent RDS(ON) with ID (at VGS=10V) 50Alow gate charge. With the excellent thermal resistance of RDS(ON) (at VGS=10V)
9.5. Size:358K aosemi
aoi4146.pdf
AOD4146/AOI414630V N-Channel MOSFETTMSDMOSGeneral Description Product Summary30VThe AOD4146/AOI4146 is fabricated with SDMOSTM VDS ID (at VGS=10V) 55Atrench technology that combines excellent RDS(ON) with lowgate charge.The result is outstanding efficiency with RDS(ON) (at VGS=10V)
9.6. Size:291K aosemi
aoi4102.pdf
AOD4102/AOI410230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOD4102/AOI4102 uses advanced trenchtechnology and design to provide excellent RDS(ON) with ID (at VGS=10V) 19Alow gate charge. This device is suitable for use in PWM, RDS(ON) (at VGS=10V)
9.7. Size:280K aosemi
aoi418.pdf
AOD418/AOI41830V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD418/AOI418 uses advanced trench technology to 30V36Aprovide excellent RDS(ON), low gate charge and low gate ID (at VGS= 10V)resistance. With the excellent thermal resistance of the
9.8. Size:304K aosemi
aoi4130.pdf
AOD4130/AOI413060V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AOD4130/AOI4130 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 30Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)
9.9. Size:240K inchange semiconductor
aoi4185.pdf
isc P-Channel MOSFET Transistor AOI4185FEATURESDrain Current I = -40A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R =15m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
9.10. Size:258K inchange semiconductor
aoi4184.pdf
isc N-Channel MOSFET Transistor AOI4184FEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 40V(Min)DSSStatic Drain-Source On-Resistance: R = 8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral
9.11. Size:274K inchange semiconductor
aoi4146.pdf
isc N-Channel MOSFET Transistor AOI4146FEATURESDrain Current I = 55A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5.6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose
9.12. Size:273K inchange semiconductor
aoi4102.pdf
isc N-Channel MOSFET Transistor AOI4102FEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =37m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a
9.13. Size:257K inchange semiconductor
aoi418.pdf
isc N-Channel MOSFET Transistor AOI418FEATURESDrain Current I = 36A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgenera
9.14. Size:271K inchange semiconductor
aoi4130.pdf
Isc N-Channel MOSFET Transistor AOI4130FEATURESWith TO-251(IPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
Datasheet: FMP36-015P
, FMP76-01T
, GMM3x100-01X1-SMD
, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
