All MOSFET. AOI4S60 Datasheet

 

AOI4S60 MOSFET. Datasheet pdf. Equivalent

Type Designator: AOI4S60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 56.8 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.1 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 21 pF

Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm

Package: TO-251A

AOI4S60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AOI4S60 Datasheet (PDF)

1.1. aoi4s60.pdf Size:451K _aosemi

AOI4S60
AOI4S60

AOD4S60/AOI4S60/AOU4S60 TM 600V 4A α MOS Power Transistor α α α General Description Product Summary VDS @ Tj,max 700V The AOD4S60 & AOI4S60 & AOU4S60 have been fabricated using the advanced αMOSTM high voltage IDM 16A process that is designed to deliver high levels of RDS(ON),max 0.9Ω performance and robustness in switching applications. Qg,typ 6nC By providing low RDS(o

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