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AOI516 Specs and Replacement

Type Designator: AOI516

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 512 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO-251B

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AOI516 datasheet

 ..1. Size:326K  aosemi
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AOI516

AOD516/AOI516/AOY516 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 ..2. Size:326K  aosemi
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AOI516

AOD516/AOI516/AOY516 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

 ..3. Size:274K  inchange semiconductor
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AOI516

isc N-Channel MOSFET Transistor AOI516 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 5.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose ... See More ⇒

 9.1. Size:310K  aosemi
aoi510.pdf pdf_icon

AOI516

AOD510/AOI510 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V) ... See More ⇒

Detailed specifications: AOI482, AOI4N60, AOI4S60, AOI4T60, AOI4T60P, AOI508, AOI510, AOI514, IRF640, AOI530, AOI538, AOI5N40, AOI7N60, AOI7N65, AOI7S65, AOI8N25, AOI9N50

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