AOK20N60 PDF and Equivalents Search

 

AOK20N60 Specs and Replacement

Type Designator: AOK20N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 417 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 125 nS

Cossⓘ - Output Capacitance: 273 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.37 Ohm

Package: TO-247

AOK20N60 substitution

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AOK20N60 datasheet

 ..1. Size:445K  aosemi
aok20n60.pdf pdf_icon

AOK20N60

AOK20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒

 0.1. Size:445K  aosemi
aok20n60l.pdf pdf_icon

AOK20N60

AOK20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) ... See More ⇒

 0.2. Size:377K  inchange semiconductor
aok20n60l.pdf pdf_icon

AOK20N60

isc N-Channel MOSFET Transistor AOK20N60L FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.37 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo... See More ⇒

 9.1. Size:1277K  aosemi
aok20b65m1.pdf pdf_icon

AOK20N60

AOK20B65M1/AOT20B65M1/AOB20B65M1 TM 650V, 20A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 20A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab... See More ⇒

Detailed specifications: AOI5N40, AOI7N60, AOI7N65, AOI7S65, AOI8N25, AOI9N50, AOK10N90, AOK18N65, IRFB4115, AOK20S60, AOK22N50, AOK27S60, AOK29S50, AOK40N30, AOK42S60, AOK53S60, AOK5N100

Keywords - AOK20N60 MOSFET specs

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