All MOSFET. AOK9N90 Datasheet

 

AOK9N90 Datasheet and Replacement


   Type Designator: AOK9N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 368 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 152 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-247
 

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AOK9N90 Datasheet (PDF)

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AOK9N90

AOK9N90900V,9A N-Channel MOSFETGeneral Description Product Summary VDS1000@150The AOK9N90 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 9Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

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AOK9N90

isc N-Channel MOSFET Transistor AOK9N90FEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: AOK27S60 , AOK29S50 , AOK40N30 , AOK42S60 , AOK53S60 , AOK5N100 , AOK60N30 , AOK8N80 , K4145 , AOL1202 , AOL1208 , AOL1240 , AOL1242 , AOL1401 , AOL1404 , AOL1413 , AOL1414 .

History: NCE01H13D | RQJ0305EQDQA | DH028N03E | P057AAT | AON6266 | KRLML6401 | RJK1008DPP-E0

Keywords - AOK9N90 MOSFET datasheet

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