All MOSFET. AOK9N90 Datasheet

 

AOK9N90 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOK9N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 368 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 46 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 152 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO-247

 AOK9N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOK9N90 Datasheet (PDF)

 ..1. Size:289K  aosemi
 aok9n90.pdf

AOK9N90 AOK9N90

AOK9N90900V,9A N-Channel MOSFETGeneral Description Product Summary VDS1000@150The AOK9N90 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 9Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 ..2. Size:378K  inchange semiconductor
 aok9n90.pdf

AOK9N90 AOK9N90

isc N-Channel MOSFET Transistor AOK9N90FEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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