All MOSFET. AOL1202 Datasheet

 

AOL1202 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AOL1202
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 54 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: ULTRA-SO8

 AOL1202 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AOL1202 Datasheet (PDF)

 ..1. Size:223K  aosemi
aol1202.pdf

AOL1202
AOL1202

AOL120230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOL1202 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 54Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 8.1. Size:173K  aosemi
aol1206.pdf

AOL1202
AOL1202

AOL120630V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1206 uses trench MOSFET technology that is 30Vuniquely optimized to provide the most efficient high ID (at VGS=10V)54Afrequency switching performance.Power losses are

 8.2. Size:242K  aosemi
aol1208.pdf

AOL1202
AOL1202

AOL120830V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1208 uses trench MOSFET technology that is 30V50Auniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance.Power losses are

 9.1. Size:263K  aosemi
aol1240.pdf

AOL1202
AOL1202

AOL124040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AOL1240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 69Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 9.2. Size:260K  aosemi
aol1242.pdf

AOL1202
AOL1202

AOL124240V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AOL1242 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 69Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK2796S | RQ1E100XN | CS6N60A3HDY

 

 
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