AOL1208 MOSFET Datasheet: N-Ch, 30V, 50A. Full specification with pinout and replacement list

AOL1208 Specs and Replacement

Type Designator: AOL1208

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: ULTRA-SO8

AOL1208 substitution

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AOL1208 datasheet

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AOL1208 30V N-Channel MOSFET General Description Product Summary VDS The AOL1208 uses trench MOSFET technology that is 30V 50A uniquely optimized to provide the most efficient high ID (at VGS=10V) frequency switching performance.Power losses are ... See More ⇒

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AOL1206 30V N-Channel MOSFET General Description Product Summary VDS The AOL1206 uses trench MOSFET technology that is 30V uniquely optimized to provide the most efficient high ID (at VGS=10V) 54A frequency switching performance.Power losses are ... See More ⇒

8.2. Size:223K aosemi
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AOL1202 30V N-Channel MOSFET General Description Product Summary VDS 30V The AOL1202 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 54A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) ... See More ⇒

9.1. Size:263K aosemi
aol1240.pdf pdf_icon

AOL1240 40V N-Channel MOSFET General Description Product Summary VDS 40V The AOL1240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 69A frequency switching performance.Power losses are RDS(ON) (at VGS=10V) ... See More ⇒