AOL1242
MOSFET. Datasheet pdf. Equivalent
Type Designator: AOL1242
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 68
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 69
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 2.5
nS
Cossⓘ -
Output Capacitance: 405
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052
Ohm
Package:
ULTRA-SO8
AOL1242
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AOL1242
Datasheet (PDF)
..1. Size:260K aosemi
aol1242.pdf
AOL124240V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AOL1242 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 69Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
8.1. Size:263K aosemi
aol1240.pdf
AOL124040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AOL1240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 69Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
9.1. Size:173K aosemi
aol1206.pdf
AOL120630V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1206 uses trench MOSFET technology that is 30Vuniquely optimized to provide the most efficient high ID (at VGS=10V)54Afrequency switching performance.Power losses are
9.2. Size:242K aosemi
aol1208.pdf
AOL120830V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1208 uses trench MOSFET technology that is 30V50Auniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance.Power losses are
9.3. Size:223K aosemi
aol1202.pdf
AOL120230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOL1202 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 54Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
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