AOL1454 Specs and Replacement
Type Designator: AOL1454
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 60 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12.5 nS
Cossⓘ -
Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: ULTRA-SO8
- MOSFET ⓘ Cross-Reference Search
AOL1454 datasheet
..1. Size:224K aosemi
aol1454.pdf 
AOL1454 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1454 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD VDS (V) = 40V protected. This device is suitable for use as a low side ID = 50A (VGS = 10V) switch in SMPS and general purpose applications. RDS(ON) ... See More ⇒
0.1. Size:370K aosemi
aol1454g.pdf
AOL1454G TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V) ... See More ⇒
8.1. Size:256K aosemi
aol1458.pdf
AOL1458 30V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 30V The AOL1458 is fabricated with SDMOSTM trench ID (at VGS=10V) 46A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) ... See More ⇒
9.1. Size:235K aosemi
aol1420.pdf
AOL1420 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1420 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and low ID = 85A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON) ... See More ⇒
9.2. Size:226K aosemi
aol1446.pdf
AOL1446 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1446 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate chargeand low ID = 85A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON) ... See More ⇒
9.3. Size:255K aosemi
aol1412.pdf
AOL1412 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AOL1412 uses advanced trench technology ID (at VGS=10V) 70A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V) ... See More ⇒
9.4. Size:352K aosemi
aol1404g.pdf
AOL1404G 20V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 46A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V) ... See More ⇒
9.5. Size:231K aosemi
aol1404.pdf
AOL1404 20V N-Channel MOSFET General Description Product Summary VDS The AOL1404 combines advanced trench MOSFET 20V technology with a low resistance package to provide ID (at VGS=4.5V) 45A extremely low RDS(ON). This device is ideal for load switch ... See More ⇒
9.6. Size:137K aosemi
aol1436.pdf
AOL1436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1436 uses advanced trench technology to VDS (V) = 25V provide excellent RDS(ON), shoot-through immunity and ID = 50A (VGS = 10V) body diode characteristics. This device is ideally suite RDS(ON) ... See More ⇒
9.7. Size:144K aosemi
aol1401.pdf
AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate VDS (V) = -38V charge with a 25V gate rating. This device is suitable ID = -85A for use as a load switch or in PWM applications. It is RDS(ON) ... See More ⇒
9.8. Size:230K aosemi
aol1428.pdf
AOL1428 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1428 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device VDS (V) = 30V is suitable for use as a high side switch in SMPS and ID = 45A (VGS = 10V) general purpose applications. RDS(ON) ... See More ⇒
9.9. Size:380K aosemi
aol1448.pdf
AOL1448 30V N-Channel MOSFET General Description Product Summary VDS 30V The AOL1448 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 36A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V) ... See More ⇒
9.10. Size:209K aosemi
aol1444.pdf
AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity and ID = 85A (VGS = 10V) body diode characteristics. This device is ideally RDS(ON) ... See More ⇒
9.11. Size:156K aosemi
aol1432a.pdf
AOL1432A N-Channel SDMOSTM POWER Transistor General Description Features VDS (V) = 25V The AOL1432A is fabricated with SDMOSTM trench ID = 44A (VGS = 10V) technology that combines excellent RDS(ON) with low gate charge. The result is outstanding efficiency with RDS(ON) ... See More ⇒
9.12. Size:232K aosemi
aol1482.pdf
AOL1482 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOL1482 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 28A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V) ... See More ⇒
9.13. Size:138K aosemi
aol1413.pdf
AOL1413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1413 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge VDS (V) = -30V with a 25V gate rating. This device is suitable for use ID = -38A (VGS = -10V) as a load switch or in PWM applications. The device is RDS(ON) ... See More ⇒
9.14. Size:231K aosemi
aol1426.pdf
AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1426 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge.This device ID = 46A (VGS = 10V) is suitable for use as a high side switch in SMPS and RDS(ON) ... See More ⇒
9.15. Size:140K aosemi
aol1432.pdf
AOL1432 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1432 uses advanced trench technology and VDS (V) =25V design to provide excellent RDS(ON) with low gate ID = 44 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON) ... See More ⇒
9.16. Size:208K aosemi
aol1408.pdf
AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1408 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity and ID = 85A (VGS = 10V) body diode characteristics. This device is ideally suited RDS(ON) ... See More ⇒
9.17. Size:170K aosemi
aol1414.pdf
AOL1414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1414 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate chargeand low ID = 85A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON) ... See More ⇒
9.18. Size:240K aosemi
aol1428a.pdf
AOL1428A 30V N-Channel MOSFET General Description Product Summary VDS The AOL1428A combines advanced trench MOSFET 30V 49A technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON). This device is suitable for use as a ... See More ⇒
Detailed specifications: AOL1404, AOL1413, AOL1414, AOL1426, AOL1428A, AOL1432, AOL1432A, AOL1448, 5N65, AOL1458, AOL1482, AOL1700, AOL1712, AON1605, AON1606, AON1610, AON1611
Keywords - AOL1454 MOSFET specs
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