AON2240 MOSFET. Datasheet pdf. Equivalent
Type Designator: AON2240
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 112 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: DFN2X2B
AON2240 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON2240 Datasheet (PDF)
aon2240.pdf
AON224040V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON2240 combines advanced trench MOSFET 40Vtechnology with a low resistance package to provide ID (at VGS=10V) 8Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V)
aon2240.pdf
SMD Type MOSFETN-Channel MOSFETAON2240 (KON2240)DFN 2x2BTop View Features VDS (V) = 40V ID = 8 A (VGS = 10V) RDS(ON) 21m (VGS = 10V) RDS(ON) 29m (VGS = 4.5V)Bottom View DGS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 40V Gate-Source Voltage VGS 20 TA=25 8 Continuous Drain
aon2260.pdf
AON226060V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON2260 combines advanced trench MOSFET 60Vtechnology with a low resistance package to provide ID (at VGS=10V) 6Aextremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS = 10V)
aon2290.pdf
AON2290100V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON2290 combines advanced trench MOSFET 100Vtechnology with a low resistance package to provide ID (at VGS=10V) 4.5Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =10V)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IXTD110N25T-8W
History: IXTD110N25T-8W
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