AON2407 MOSFET Datasheet: P-Ch, 30V, 6.3A. Full specification with pinout and replacement list

AON2407 Specs and Replacement

Type Designator: AON2407

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0375 Ohm

Package: DFN2X2B

AON2407 substitution

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AON2407 datasheet

..1. Size:260K aosemi
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AON2407 30V P-Channel MOSFET General Description Product Summary VDS The AON2407 combines advanced trench MOSFET -30V technology with a low resistance package to provide ID (at VGS=-10V) -6.3A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-10V) ... See More ⇒

8.1. Size:240K aosemi
aon2401.pdf pdf_icon

AON2401 8V P-Channel MOSFET General Description Product Summary VDS The AON2401 combines advanced trench MOSFET -8V technology with a low resistance package to provide ID (at VGS=-2.5V) -8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS =-2.5V) ... See More ⇒

8.2. Size:247K aosemi
aon2406.pdf pdf_icon

AON2406 20V N-Channel MOSFET General Description Product Summary VDS 20V The AON2406 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=4.5V) 8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=4.5V) ... See More ⇒

8.3. Size:234K aosemi
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AON2400 8V N-Channel MOSFET General Description Product Summary VDS The AON2400 combines advanced trench MOSFET 8V technology with a low resistance package to provide ID (at VGS=4.5V) 8A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS = 2.5V) ... See More ⇒