AON4803
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON4803
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 3.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.1
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 80
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09
Ohm
Package: DFN2X3
AON4803
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON4803
Datasheet (PDF)
..1. Size:308K aosemi
aon4803.pdf
AON480320V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON4803 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -3.4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)
8.1. Size:159K aosemi
aon4805l.pdf
AON4805LDual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4805L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge and ID = -4.5A (VGS = -4.5V)operation with gate voltage as low as 1.8V. This RDS(ON)
8.2. Size:302K aosemi
aon4807.pdf
AON480730V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON4807 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)
Datasheet: WPB4002
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