All MOSFET. AON4805L Datasheet

 

AON4805L MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON4805L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: DFN2X3

 AON4805L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON4805L Datasheet (PDF)

 ..1. Size:159K  aosemi
 aon4805l.pdf

AON4805L AON4805L

AON4805LDual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4805L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge and ID = -4.5A (VGS = -4.5V)operation with gate voltage as low as 1.8V. This RDS(ON)

 8.1. Size:308K  aosemi
 aon4803.pdf

AON4805L AON4805L

AON480320V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON4803 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -3.4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

 8.2. Size:302K  aosemi
 aon4807.pdf

AON4805L AON4805L

AON480730V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON4807 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top