All MOSFET. AON4805L Datasheet

 

AON4805L Datasheet and Replacement


   Type Designator: AON4805L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: DFN2X3
 

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AON4805L Datasheet (PDF)

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AON4805L

AON4805LDual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON4805L uses advanced trench technology to VDS (V) = -20Vprovide excellent RDS(ON), low gate charge and ID = -4.5A (VGS = -4.5V)operation with gate voltage as low as 1.8V. This RDS(ON)

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AON4805L

AON480320V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON4803 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -3.4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

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AON4805L

AON480730V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AON4807 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -4Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

Datasheet: AON3814 , AON3816 , AON3818 , AON4420L , AON4421 , AON4605 , AON4703 , AON4803 , HY1906P , AON4807 , AON5802B , AON5810 , AON5820 , AON6202 , AON6204 , AON6210 , AON6230 .

History: CTLM8110-M832D | HSS2306A

Keywords - AON4805L MOSFET datasheet

 AON4805L cross reference
 AON4805L equivalent finder
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