AON6236
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6236
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 39
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 30
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 2.8
nS
Cossⓘ -
Output Capacitance: 318
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
DFN5X6
AON6236
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6236
Datasheet (PDF)
..1. Size:637K 1
aon6236.pdf
AON623640V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6236 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
..2. Size:273K aosemi
aon6236.pdf
AON623640V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6236 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 30Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)
8.1. Size:323K 1
aon6234.pdf
AON623440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6234 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are
8.2. Size:237K aosemi
aon6232a.pdf
AON6232A40V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 40V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
8.3. Size:248K aosemi
aon6230.pdf
AON623040V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6230 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)
8.4. Size:327K aosemi
aon6234.pdf
AON623440V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6234 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are
8.5. Size:344K aosemi
aon6232.pdf
AON623240V N-Channel MOSFETGeneral Description Product SummaryVDSThe AON6232 uses trench MOSFET technology that is 40Vuniquely optimized to provide the most efficient high 85A ID (at VGS=10V)frequency switching performance.Power losses are
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