All MOSFET. AON6246 Datasheet

 

AON6246 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AON6246
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 47 nC
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 258 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
   Package: DFN5X6

 AON6246 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AON6246 Datasheet (PDF)

 ..1. Size:287K  aosemi
 aon6246.pdf

AON6246 AON6246

AON624660V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AON6246 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 80Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 ..2. Size:1038K  cn vbsemi
 aon6246.pdf

AON6246 AON6246

AON6246www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.006 at VGS = 10 V 80 Material categorization:600.007 at VGS = 4.5 V 65DDFN5X6Top ViewTop View Bottom View1827G3645PIN1SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25

 8.1. Size:321K  1
 aon6240.pdf

AON6246 AON6246

AON624040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 8.2. Size:265K  aosemi
 aon6248.pdf

AON6246 AON6246

AON624860V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AON6248 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 53Afrequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

 8.3. Size:287K  aosemi
 aon6242.pdf

AON6246 AON6246

AON624260V N-Channel MOSFETGeneral Description Product SummaryVDS 60VThe AON6242 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

 8.4. Size:298K  aosemi
 aon6244.pdf

AON6246 AON6246

AON624460V N-Channel MOSFETGeneral Description Product SummaryVDS60VThe AO6244 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS =10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS =10V)

 8.5. Size:321K  aosemi
 aon6240.pdf

AON6246 AON6246

AON624040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AON6240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 85Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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