HAT1036R MOSFET. Datasheet pdf. Equivalent

   Type Designator: HAT1036R
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 350 nS
   Cossⓘ - Output Capacitance: 870 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP8

HAT1036R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HAT1036R Datasheet (PDF)

0.1. Size:102K renesas
rej03g1149 hat1036rds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.1. Size:242K renesas
rej03g1150 hat1038rrjds.pdf