AON6407
MOSFET. Datasheet pdf. Equivalent
Type Designator: AON6407
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 83
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.6
V
|Id|ⓘ - Maximum Drain Current: 85
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 75
nC
trⓘ - Rise Time: 16
nS
Cossⓘ -
Output Capacitance: 900
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045
Ohm
Package:
DFN5X6
AON6407
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AON6407
Datasheet (PDF)
..1. Size:268K 1
aon6407.pdf 
AON640730V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON6407 combines advanced trench MOSFET -30technology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
..2. Size:262K aosemi
aon6407.pdf
AON640730V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON6407 combines advanced trench MOSFET -30technology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
8.1. Size:159K aosemi
aon6404.pdf
AON640430V N-Channel MOSFETGeneral Description Product SummaryThe AON6404 combines advanced trench MOSFET VDS (V) = 30Vtechnology with a low resistance package to provideID = 85A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
8.2. Size:231K aosemi
aon6403.pdf
AON640330V P-Channel MOSFETGeneral Description Product SummaryVDS -30VThe AON6403 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
8.3. Size:226K aosemi
aon6400.pdf
AON640030V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6400 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
8.4. Size:189K aosemi
aon6404a.pdf
AON6404A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6404A combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)
8.5. Size:245K aosemi
aon6406.pdf
AON6406 30V N-Channel MOSFETGeneral Description Product SummaryVDS30V Latest Trench Power LV technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 170A Low Gate Charge RDS(ON) (at VGS=10V)
8.6. Size:245K aosemi
aon6405.pdf
AON640530V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON6405 combines advanced trench MOSFET -30technology with a low resistance package to provide ID (at VGS= -10V) -30Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
8.7. Size:151K aosemi
aon6408.pdf
AON640830V N-Channel MOSFETGeneral Description Product SummaryThe AON6408 combines advanced trench MOSFETVDS (V) = 30Vtechnology with a low resistance package to provideID = 25A (VGS = 10V)extremely low RDS(ON). This device is for PWMRDS(ON)
8.8. Size:874K cn vbsemi
aon6405.pdf
AON6405www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Extended VGS range ( 25 V) for adaptor switchVDS (V) RDS(on) () Max. applicationsID a Qg (Typ.) Extremely low RDS(on)0.0080 at VGS = - 10 V - 60 TrenchFET Power MOSFET- 30 0.0090 at VGS = - 6 V - 53 66 nC 100 % Rg and UIS Tested0.0012 at VGS = - 4.5 V - 50 Typical ESD Perf
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