All MOSFET. HAT1041T Datasheet

 

HAT1041T MOSFET. Datasheet pdf. Equivalent

Type Designator: HAT1041T

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 1.3 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 6 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1850 pF

Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm

Package: TSSSOP8

HAT1041T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HAT1041T Datasheet (PDF)

1.1. hat1041t.pdf Size:52K _renesas

HAT1041T
HAT1041T

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

4.1. rej03g0074 hat1047rrj.pdf Size:123K _renesas

HAT1041T
HAT1041T

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. hat1043m.pdf Size:50K _hitachi

HAT1041T
HAT1041T

HAT1043M Silicon P Channel Power MOS FET Power Switching ADE-208-754D (Z) 5th Edition February 1999 Features • Low on-resistance • Low drive current • High density mounting • 2.5 V gate drive device can be driven from 3 V source Outline TSOP–6 4 5 6 1 2 5 6 3 D D D D 2 1 3 G 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT1043M Absolute Maximum Ratings (Ta = 25

4.3. hat1046r.pdf Size:53K _hitachi

HAT1041T
HAT1041T

HAT1046R Silicon P Channel Power MOS FET High Speed Power Switching ADE-208-1222 (Z) 1st. Edition Mar. 2001 Features • Low-voltage drive (2.5 V drive) • Low on resistance • Capable of 4 V gate drive • Low on-resistance RDS(on) = 30 mΩ typ. (at VGS = –4 V) External View SOP-8 5 6 7 8 4 3 2 1 7 8 5 6 D D D D 4 2 G G 1, 3 Source 2, 4 Gate S 3 S1 5, 6, 7

4.4. hat1044m.pdf Size:25K _hitachi

HAT1041T
HAT1041T

HAT1044M Silicon P Channel Power MOS FET Power Switching ADE-208-753C(Z) Preliminary 4th. Edition December 1998 Features • Low on-resistance • Low drive current • High density mounting • 4.5V gate drive device can be driven from 5V source Outline TSOP–6 4 5 6 1 2 5 6 3 D D D D 2 1 3 G 4 Source 3 Gate 1, 2, 5, 6 Drain S 4 HAT1044M Absolute Maximum Rating

Datasheet: HAF2007 , HAF2008 , HAF2011 , HAF2012 , HAT1031T , HAT1033T , HAT1036R , HAT1040T , IRF630A , HAT1043M , HAT1044M , HAT1046R , HAT2031T , HAT2036R , HAT2037T , HAT2039R , HAT2040R .

 


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