AON6426 Datasheet and Replacement
Type Designator: AON6426
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 65 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.6 nS
Cossⓘ - Output Capacitance: 290 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: DFN5X6
AON6426 substitution
AON6426 Datasheet (PDF)
aon6426.pdf

AON642630V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6426 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 65A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
aon6424.pdf

AON642430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6424 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 41Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6428.pdf

AON642830V N-Channel MOSFET General Description Product SummaryVDS30VThe AON6428 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 43Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6422.pdf

AON642230V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6422 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 80A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
Datasheet: AON6404A , AON6405 , AON6407 , AON6411 , AON6413 , AON6414A , AON6416 , AON6424 , IRF4905 , AON6428 , AON6435 , AON6440 , AON6442 , AON6444 , AON6448 , AON6450 , AON6452 .
History: IXFK15N100Q | OSG60R055TT3ZF | AON6298 | STU60N55F3 | MTED6N25KJ3 | DMP21D0UFB | 2SK715U-AC
Keywords - AON6426 MOSFET datasheet
AON6426 cross reference
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History: IXFK15N100Q | OSG60R055TT3ZF | AON6298 | STU60N55F3 | MTED6N25KJ3 | DMP21D0UFB | 2SK715U-AC



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